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profet ? bts436l2 semiconductor group page 1 of 12 1999-feb-26 smart high-side power switch one channel: 38m w status feedback product summary package on-state resistance r on 38m w operating voltage v bb(on) 4.75...41v nominal load current i l(nom) 9.8a current limitation i l(scr) 40a general description n channel vertical power mosfet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos technology. fully protected by embedded protection functions applications c compatible high-side power switch with diagnostic feedback for 5v, 12v and 24v grounded loads all types of resistive, inductive and capacitve loads most suitable for loads with high inrush currents, so as lamps replaces electromechanical relays, fuses and discrete circuits basic functions very low standby current cmos compatible input fast demagnetization of inductive loads stable behaviour at undervoltage wide operating voltage range logic ground independent from load ground protection functions short circuit protection overload protection current limitation thermal shutdown overvoltage protection (including load dump) with external resistor reverse battery protection with external resistor loss of ground and loss of v bb protection electrostatic discharge protection (esd) diagnostic function diagnostic feedback with open drain output open load detection in on-state feedback of thermal shutdown in on-state to 220-5-11 to-263-5-2 to-220-5-12 standard smd straight block diagram vbb logic with protection functions in st gnd load profet out
bts436l2 semiconductor group page 2 1999-feb-26 functional diagram pin definitions and functions pin symbol function 1 gnd logic ground 2in input , activates the power switch in case of logical high signal 3v bb positive power supply voltage the tab is shorted to pin 3 4st diagnostic feedback , low on failure 5out output to the load tab v bb positive power supply voltage the tab is shorted to pin 3 pin configuration (top view) tab = v bb 1 2 (3) 4 5 gnd in st out out gnd overvoltage protection logic internal volta g e suppl y esd temperature sensor clamp for inductive load gate control + charge pump current limit open load detection st vbb load in profet
bts436l2 semiconductor group page 3 1999-feb-26 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 43 v supply voltage for full short circuit protection t j start =-40 ...+150c v bb 24 v load dump protection 1 ) v loaddump = v a + v s , v a = 13.5 v r i 2 ) = 2 w , r l = 4.0 w , t d = 400 ms, in= low or high v load dump 3 60 v load current (current limit, see page 5) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 75 w maximal switchable inductance, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. (see diagram on page 8) i l(iso) = 9.8 a, r l = 0 w , e 4 ) as =0.33j: z l 5.0 mh electrostatic discharge capability (esd) in: (human body model) st: out to all other pins shorted: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993; r=1.5k w ; c=100pf v esd 1.0 4.0 8.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 7 i in i st 2.0 5.0 ma thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case: junction - ambient (free air): device on pcb 5 ) : r thjc r thja -- -- -- -- -- 33 1.75 75 -- k/w 1 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 w resistor for the gnd connection is recommended). 2 ) r i = internal resistance of the load dump test pulse generator 3 ) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4 ) e as is the maximum inductive switch-off energy 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.
bts436l2 semiconductor group page 4 1999-feb-26 electrical characteristics parameter and conditions symbol values unit at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 2 a; v bb 3 7v t j =25 c: t j =150 c: see diagram, page 9 r on -- 35 64 38 72 m w nominal load current, (pin 3 to 5) iso 10483-1, 6.7: v on =0.5v, t c =85c i l(iso) 8.8 9.8 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 7 (not tested specified by design) i l(gndhigh) -- -- 2 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 w , t on t off 50 50 100 120 200 250 m s slew rate on 10 to 30% v out , r l = 12 w , d v /dt on 0.1 -- 1 v/ m s slew rate off 70 to 40% v out , r l = 12 w , -d v /dt off 0.1 -- 1 v/ m s operating parameters operatin g volta g e t j =-40 t j =+25...+150c: v bb(on) 4.75 -- -- 41 43 v overvolta g e protection 6 ) t j =-40c: i bb =40 ma t j =25...+150c: v bb(az) 41 43 -- 47 -- 52 v standb y current ( pin 3 ) 7) t j =-40...+25c : v in =0; see diagram on page 9 t j = 150c: i bb(off) -- -- 5 -- 8 25 m a off-state output current (included in i bb(off) ) v in =0 i l(off) -- 1 10 m a operating current 8 ) , v in =5 v i gnd -- 0.8 1.4 ma 6 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 w resistor for the gnd connection is recommended. see also v on(cl) in table of protection functions and circuit diagram page 7. 7 ) measured with load 8 ) add i st , if i st > 0, add i in , if v in >5.5 v
bts436l2 parameter and conditions symbol values unit at t j = -40...+150c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 5 1999-feb-26 protection functions current limit (pin 3 to 5) i l(lim) (see timing diagrams on page 11) t j = -40c: t j =25 c: t j =+150c: 46 39 30 58 51 38 68 58 46 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 11) -- 40 -- a thermal shutdown time 9) t j,start = 25c: (see timing diagrams on page 11) t off(sc) -- 1.9 -- ms output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 43 47 52 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k reverse battery (pin 3 to 1) 10) - v bb -- -- 32 v reverse battery voltage drop (v out > v bb ) 11 ) i l = -2 a t j =150 c: -v on(rev) -- 600 -- mv diagnostic characteristics open load detection current (on-condition) i l (ol) 10 -- 900 ma input and status feedback 12 ) input resistance see circuit page 7 r i 2.5 3.5 6 k w input turn-on threshold voltage v in(t+) 1.7 -- 3.2 v input turn-off threshold voltage v in(t-) 1.5 -- -- v input threshold hysteresis d v in(t) -- 0.5 -- v off state input current (pin 2), v in = 0.4 v i in(off) 1--50 m a on state input current (pin 2), v in = 5 v i in(on) 20 50 90 m a delay time for status with open load after switch off (see timing diagrams on page 11) t d(st ol4) 100 520 900 m s status output (open drain) zener limit voltage i st = +1.6 ma: st low voltage i st = +1.6 ma: v st(high) v st(low) 5.4 -- 6.1 -- -- 0.4 v 9 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air. 10 ) requires 150 w resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 3 and circuit page 7). 11 ) specified by design, not tested 12 ) if a ground resistor r gnd is used, add the voltage drop across this resistor.
bts436l2 semiconductor group page 6 1999-feb-26 truth table input output status level level bts 428l2 normal operation l h l h h h open load l h z h h l overtem- perature l h l l h l l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 11)
bts436l2 semiconductor group page 7 1999-feb-26 terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r esd-zd i i i the use of esd zener diodes as voltage clamp at dc conditions is not recommended status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5.0 ma; r st(on) < 375 w at 1.6 ma. the use of esd zener diodes as voltage clamp at dc conditions is not recommended. inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ. overvolt. and reverse batt. protection + v bb in st st r gnd gnd r signal gnd logic profet v z2 i r v z1 load gnd load r out st r + 5v v z1 = 6.1 v typ., v z2 = 47 v typ., r gnd = 150 w , r st = 15 k w , r i = 3.5 k w typ. open-load detection in on-state open load, if v on < r on i l(ol) ; in high open load detection logic unit + v bb out on v on gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available.
bts436l2 semiconductor group page 8 1999-feb-26 gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high for inductive load currents up to the limits defined by z l (max. ratings and diagram on page 8) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load all the load current flows through the gnd connection. inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load l r l { z l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 w : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 w z l [mh] 1 10 100 1000 02 461012 14 16 18 0.1 i l [a]
bts436l2 semiconductor group page 9 1999-feb-26 typ. on-state resistance r on = f (v bb ,t j ) ; i l = 2 a, in = high r on [m w ] 80 70 60 50 40 30 20 10 3 5 7 9 30 40 tj = 150c 25c -40c v bb [v] typ. standby current i bb(off) = f (t j ) ; v bb = 9...34 v, in1,2 = low i bb(off) [ m a] 0 5 10 15 20 25 30 35 40 45 -50 0 50 100 150 200 t j [c]
bts436l2 semiconductor group page 10 1999-feb-26 timing diagrams figure 1a: v bb turn on: out v v bb t st open drain in proper turn on under all conditions figure 2a: switching a resistive load, turn-on/off time and slew rate definition: in t v out i l t t on off 90% dv/dton dv/dtoff 10% figure 2b: switching a lamp, in st out l t v i the initial peak current should be limited by the lamp and not by the initial short circuit current i l(scp) = 30 a typ. of the device. figure 2c: switching an inductive load in st l t v i out i l(ol) *) if the time constant of load is too large, open-load-status may occur
bts436l2 semiconductor group page 11 1999-feb-26 figure 3a: short circuit shut down by overtemperature, reset by cooling other channel: normal operation t i st in l l(scr) i i l(lim) t off(sc) heating up of the chip may require several milliseconds, depending on external conditions figure 4a: overtemperature: reset if t j < t jt in st out j t v t figure 5a: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol) t d(st ol) t d(st ol) = 10 m s typ. figure 5b: open load: turn on/off to open load in st l t i t d(stol4)
bts436l2 semiconductor group page 12 1999-feb-26 package and ordering code all dimensions in mm standard (=staggered): p-to220-5-11 sales code bts436l2 ordering code: q67060-s6111-a2 smd: p-to263-5-2 (tape&reel) sales code bts436l2 g ordering code: t&r q67060-s6111-a3 straight: p-to220-5-12 sales code bts436l2 s ordering code: q67060-s6111-a4 published by siemens ag, bereich bauelemente, vertrieb, produkt-information, balanstra?e 73, d-81541 mnchen ? siemens ag 1999. all rights reserved as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. the information describes a type of component and shall not be considered as warranted characteristics. the characteristics for which siemens grants a warranty will only be specified in the purchase contract. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the siemens companies and representatives woldwide (see address list). due to technical requirements components may contain dan- gerous substances. for information on the type in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing: please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 13 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 14 ) with the express written approval of the semiconductor group of siemens ag. 13 ) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 14 ) life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered. a 8? max. b a 0.25 m 0.1 typical 9.8 0.15 0.2 10 8.5 1) 8 1) (15) 0.2 9.25 0.3 1 0...0.15 5x0.8 0.1 0.1 1.27 4.4 b 0.5 0.1 0.3 2.7 4.7 0.5 0.05 1) 0.1 all metal surfaces tin plated, except area of cut. 0.3 1.3 2.4 4x1.7 a a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 1.7 0.8 0.1 0.1 1.27 4.4 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 0.3 8.6 10.2 0.3 0.4 3.9 0.4 8.4 3.7 0.3 a b a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 1.7 0.8 0.1 0.1 1.27 4.4 b 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 13 0.5 0.5 11 6x

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